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RF2157
2
Typical Applications
* 3V 1850-1910MHz CDMA PCS Handsets * 3V 1750-1780MHz CDMA PCS Handsets * 3V TDMA PCS Handsets * Spread-Spectrum Systems * Commercial and Consumer Systems * Portable Battery-Powered Equipment
PCS CDMA/TDMA 3V POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
3.75
2 0.45 0.28 0.75 0.50 0.80 TYP 1
1
The RF2157 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA and TDMA handheld digital equipment, spread-spectrum systems, and other applications in the 1710MHz to 1910MHz band. The device is packaged in a compact 4mmx4mm LCC, as well as a 4mmx4mm MLF (micro leaded package). The frequency response can be optimized for linear performance over 1710MHz to 1910MHz. The device features a digital mode switch which can be used to minimize operating current under low output power conditions. Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
3.75
+
1.60 4.00
12 1.50 SQ INDEX AREA 3 3.20 4.00 1.00 0.90
0.75 0.65
NOTES:
1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip.
0.05 0.00
Dimensions in mm.
The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max.
u
GND
Package Style: LCC, 16-Pin, 4x4
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 3V Supply * 29dBm Linear Output Power * 24dB Linear Gain * 35% Linear Efficiency * On-board Power Down Mode * 1750MHz to 1910MHz Operation
RF IN
NC
NC 14
1 VPD1 MODE VPD2 2 3 4 5 GND
16
15
13 12 11 10 VCC1 VCC1 VCC
6 NC
7 RF OUT
8 RF OUT
NC 9 GND
Ordering Information
RF2157 RF2157 PCBA PCS CDMA Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A19 010611
2-187
RF2157
Absolute Maximum Ratings Parameter
Supply Voltage (RF off) Supply Voltage (POUT 31dBm) Mode Voltage (VMODE)
Rating
+8.0 +4.5 +3.5 +3.5 +12 -30 to +110 -65 to +150
Unit
VDC VDC VDC VDC dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature
Parameter
Overall
Usable Frequency Range Typical Frequency Range Linear Gain Small Signal Gain Second Harmonic (Including second harmonic trap) Third Harmonic Fourth Harmonic
Specification Min. Typ. Max.
Unit
Condition
T=25C, VCC =3.4 V, VPD =2.8V, POUT =29dBm, unless otherwise specified
1750 1750-1780 1850-1910 25 24 27 -35 -40 -45 29 28 33
1910
23 22 22
28 26 29
MHz MHz MHz dB dB dB dBc dBc dBc
Tuned Matching Network Tuned Matching Network POUT =29dBm, VMODE 0.5V POUT =29dBm, VMODE 2.5V PIN -20dBm
CDMA
Linear Output Power Linear Efficiency CDMA ACPR @ 1.25MHz Noise Power @ 80MHz Offset dBm dBm % -44 dBc dBm/Hz
VMODE 2.5V VCC =3.0V POUT =16dBm
37 6 -46 -139
CDMA
Linear Output Power Linear Efficiency CDMA ACPR @ 1.25MHz Noise Power @ 80MHz Offset 29 30 35 -46 -139 37 -31 -52 < 2:1 dBm % dBc dBm/Hz % dBc dBc
VMODE 0.5V
-44
TDMA
Linear Efficiency TDMA ACPR @ 30kHz Offset TDMA ACPR @ 60kHz Offset Input VSWR Output Load VSWR Stability Junction to Case Thermal Resistance 30 -28 -48 10:1 5:1 25 C/W
No damage.
2-188
Rev A19 010611
RF2157
Parameter
Power Supply
Power Supply Voltage Idle Current VPD Current Turn On/Off Time Total Current (Power Down) VPD Low Voltage VPD High Voltage MODE High Voltage MODE Low Voltage 110 7 3.4 325 140 4.5 175 9 100 10 0.2 2.9 0.5 V mA mA mA ns A V V VMODE 0.5V VMODE =2.8V VCC =3.4V, VPD =2.8V, VMODE =2.8V No RF input power applied. VPD 0.2V
Specification Min. Typ. Max.
Unit
Condition
2
POWER AMPLIFIERS
2.7 2.5
0 2.8 2.8 0
R1 =1k
Rev A19 010611
2-189
RF2157
Pin 1 2 Function GND VPD1 Description
This pin is internally grounded to the die flag. Power down control for first stage. When this pin is "low", first stage circuits are shut off. When this pin is 2.8V, all first stage circuits are operating normally. VPD1 requires a regulated 2.8V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8V. For full power operation, VMODE is set low. VMODE will reduce the bias current by approximately 50% when set HIGH. Large Signal Gain is reduced approximately 1.5dB at 29dBm POUT. Small Signal Gain is reduced by approximately 6dB at lower temperatures. An external series resistor is optional to limit the amount of current required. Power down control for the second stage. When this pin is "low", the second stage circuit is shut off. When this pin is 2.8V, the second stage circuit is operating normally. VPD requires a regulated 2.8V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8V. A 15pF high frequency bypass capacitor is recommended. Connect to ground plane via 15nH inductor. DC return for the second stage bias circuit. This pin is internally a no connection. It is recommended that this pin be connected to either the RF output matching network or to the ground plane. RF output and power supply for final stage. This is the unmatched colRF OUT lector output of the second stage. A DC block is required following the matching components. The biasing may be provided via a parallel L-C set for resonance at the operating frequency of 1710MHz to 1910MHz. It is important to select an inductor with very low DC resistance with a From Bias 1A current rating. Alternatively, shunt microstrip techniques are also Network applicable and provide very low DC resistance. Low frequency bypassing is required for stability. Same as pin 7. See pin 7. This pin is internally grounded to the die flag. Supply for bias reference and control circuits. High frequency bypassing may be necessary. Power supply for first stage and interstage match. Pins 11 and 12 should be connected by a common trace where the pins contact the printed circuit board. Same as pin 11. This pin is internally a no connection. It is recommended that this pin be connected to either VCC1 or to the ground plane. It is recommended that these pins be connected to the ground plane for improved isolation between RF IN (pin 16) and the VCC1 pins (pins 11 and 12). It is recommended that these pins be connected to the ground plane for improved isolation between RF IN (pin 16) and the VCC1 pins (pins 11 and 12). RF input. An external 15pF series capacitor is required as a DC block. In addition, a series transmission line and shunt capacitor, 5pF, are required to provide 2:1 VSWR.
RF IN 5 pF From GND1 Bias Stages
Interface Schematic
2
POWER AMPLIFIERS
3
MODE
4
VPD2
5 6 7
GND NC RF OUT
8 9 10 11 12 13 14 15 16
RF OUT GND VCC VCC1 VCC1 NC NC NC RF IN
VCC1 15 pF
Pkg Base
GND
Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane.
2-190
Rev A19 010611
RF2157
Application Schematic Korea - CDMA
RF IN
Matching network for optimum input return loss Interstage tuning for centering frequency response RF Choke - Bias inductor for the amplifier interstage
Bypassing for VREG1 and V REG2
C5 15 pF
C24 4.7 pF
2
POWER AMPLIFIERS
TL3 20-30 mils TL4 200 mils
TL4 R12 Jumper VREG R11 Jumper VMODE R1 1 k 2 3 4 C13 15 pF 5 6 7 8 12 11 10 9 C6 15 pF L2 8.2 nH C27 15 pF 1 16 15 14 13 C30 11 pF C8 10 nF
Bypassing for V CC
VCC
Bias return
L4 15 nH
Matching network for optimum load impedance
C1 4.7 pF TL2 C14 2.2 pF
TL1
L1 12 nH C7 1.5 pF C4 15 pF C28 10 nF
C3 15 pF
Pins 1 and 9 are internally grounded to the die flag.
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series).
Board CDMA (Korea)
C30 (pF) 10
C1 (pF) 4.7
L1 (nH) 12
C14 (pF) 2.2
RF OUT
Transmission Line Length CDMA (Korea)
TL1 30-40 mils
TL2 150 mils
Rev A19 010611
2-191
RF2157
Application Schematic US - CDMA
RF IN
Matching network for optimum input return loss
2
POWER AMPLIFIERS
VREG R11 Jumper VMODE
Bypassing for VREG1 and V REG2
C5 15 pF
C24 4.7 pF
Interstage tuning for centering frequency response RF Choke - Bias inductor for the amplifier interstage
TL4 R12 Jumper R1 1 k C27 15 pF 2 3 4 C13 15 pF 5 6 7 8 1 16 15 14 13 12 11 10 9 C6 15 pF L2 8.2 nH C30 9.1 pF C8 10 nF
Bypassing for V CC
VCC
Bias return
L4 15 nH
Matching network for optimum load impedance
C1 4.7 pF TL2 C14 2.2 pF
TL1
L1 12 nH C7 1.5 pF C4 15 pF C28 10 nF
C3 15 pF
Pins 1 and 9 are internally grounded to the die flag.
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series).
Board CDMA (US)
C30 (pF) 10
C1 (pF) 4.7
L1 (nH) 12
C14 (pF) 2.2
RF OUT
Transmission Line Length CDMA (US)
TL1 30-40 mils
TL2 150 mils
TL3 20-30 mils
TL4 200 mils
2-192
Rev A19 010611
RF2157
Evaluation Board Schematic Korea - CDMA
(Download Bill of Materials from www.rfmd.com.)
RF IN
TL4 C26 1 F P2-1 R11 Jumper P2-2 R1 1 k 2 3 4 P1 P1-1 1 2 VCC GND L4 15 nH VREG VMODE C14 2.2 pF
Pins 1 and 9 are internally grounded to the die flag.
R12 Jumper
C27 15 pF
1
16
15
14
13 12 11 10
C30 11 pF TL3
C8 10 nF L2 8.2 nH
C25 1 uF
P1-1 C6 15 pF
C13 15 pF
5
6
7
8
9
C1 4.7 pF TL2
TL1
L1 12 nH C7 1.5 pF C4 15 pF C28 10 nF C2 4.7 uF
P2 P2-1 P2-2 1 2
C3 15 pF
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series).
Board CDMA (Korea)
C30 (pF) 10
C1 (pF) 4.7
L1 (nH) 12
C14 (pF) 2.2
RF OUT
Transmission Line Length CDMA (Korea)
TL1 30-40 mils
TL2 150 mils
TL3 20-30 mils
TL4 200 mils
Rev A19 010611
2-193
POWER AMPLIFIERS
C5 15 pF
C24 4.7 pF
2
RF2157
Evaluation Board Schematic US - CDMA
RF IN
2
POWER AMPLIFIERS
C26 1 F P2-1 R11 Jumper P2-2 R1 1 k R12 Jumper C27 15 pF
C5 15 pF
C24 4.7 pF
TL4 1 2 3 4 P1 P1-1 1 2 VCC GND L4 15 nH VREG VMODE C14 2.2 pF
Pins 1 and 9 are internally grounded to the die flag.
16
15
14
13 12 11 10
C30 9.1 pF TL3
C8 10 nF L2 8.2 nH
C25 1 uF
P1-1 C6 15 pF
2157400C
C13 15 pF
5
6
7
8
9
C1 4.7 pF TL2
TL1
L1 12 nH C7 1.5 pF C4 15 pF C28 10 nF C2 4.7 uF
P2 P2-1 P2-2 1 2
C3 15 pF
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series).
Board CDMA (US)
C30 (pF) 10
C1 (pF) 4.7
L1 (nH) 12
C14 (pF) 2.2
RF OUT
Transmission Line Length CDMA (US)
TL1 30-40 mils
TL2 150 mils
TL3 20-30 mils
TL4 200 mils
2-194
Rev A19 010611
RF2157
Evaluation Board Layout Board Size 2" x 2"
Board Thickness 0.031", Board Material FR-4, Multi-Layer
2
POWER AMPLIFIERS
Rev A19 010611
2-195
RF2157
2
POWER AMPLIFIERS
2-196
Rev A19 010611

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